isolation diffusion
英 [ˌaɪsəˈleɪʃn dɪˈfjuːʒən]
美 [ˌaɪsəˈleɪʃn dɪˈfjuʒən]
网络 隔离扩散
双语例句
- Objective To determine the effect of diffusion chamber for immune isolation and the proliferation of allogenic hybridoma within diffusion chamber in mice.
目的观察自制细胞扩散匣的免疫隔离作用及匣内异基因瘤细胞的在体生长情况。 - A double-layer polysilicon bipolar technology is presented. Deep-trench isolation and BF_2-implanted base layer, combined with rapid thermal annealing ( RTA), are used in the process for emitter diffusion and titanium silicide annealing.
报道了一种使用深槽隔离和注入基区及快速热退火（RTA），同时为发射极扩散和Ti硅化物退火的双层多晶硅双极技术。 - We have achieved some good results in the research of the selection of the technological condition of the isolation diffusion.
并对隔离扩散工艺条件的选择进行了探讨，取得了较明显的效果。 - Isolation Effectiveness of Composite Isolation and Its Application in Diffusion Bonding
复合阻隔法的阻隔效应原理及其在扩散连接中的应用 - METHODS Isolation, cultivation, identification, drug-sensitivity tests and confirmation of ESBLs-producing bacteria were done for the bacteria of sputum specimens collected from our hospital from Feb 2001 to Sept 2004. Susceptibility testing was performed by disk diffusion ( K-B) method.
方法2001年2月~2004年9月，从本院住院肺部感染患者痰标本中做细菌培养，采用K-B琼脂扩散法和ESBLs确证试验进行ESBLs的检测。 - A 900V HV-CMOS technology based on standard CMOS technology is simulated and optimized by omitting isolation diffusion which must be used in traditional thick epi layer power device and HVICs. As a result, the process is reduced and more compatible with standard CMOS technology.
并在标准CMOS工艺的基础上，仿真优化了900V高压工艺，省去了传统厚外延功率器件以及高压集成电路所必须的隔离扩散，减少了工艺步骤，与标准CMOS工艺更为兼容。 - Study the Process of PN Junction isolation by a "Three-step Diffusion" Method
用三步扩散法实现PN结隔离工艺的研究 - Methods According to the Project for Surveillance of Shigellosis in China, the detection, isolation and identification for Shigella spp were performed. K-B diffusion method was used to test drug susceptibility.
方法志贺氏菌监测、分离、鉴定依照《全国细菌性痢疾监测方案》，药敏试验采用K-B扩散法。 - The selection of technological condition of the isolation diffusion in the manufacturing of the silicon integrated circuit
硅集成电路制备中隔离扩散工艺条件的选择